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| Advanced Technical Information NPT3 IGBT with Diode in ISOPLUS 247TM IXER 35N120D1 IC25 VCES VCE(sat) typ. C G = 50 A = 1200 V = 2.2 V ISOPLUS 247TM E153432 G C E E G = Gate Isolated Backside* C = Collector E = Emitter *Patent pending IGBT Symbol VCES VGES IC25 IC90 ICM VCEK tSC (SCSOA) Ptot TC = 25C TC = 90C VGE = 15 V; RG = 39 ; TVJ = 125C RBSOA, Clamped inductive load; L = 100 H VCE = 900V; VGE = 15 V; RG = 39 ; TVJ = 125C non-repetitive TC = 25C Conditions TVJ = 25C to 150C Maximum Ratings 1200 20 50 32 50 VCES 10 200 V V A A A s W Features * NPT3 IGBT - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits * HiPerFREDTM diode - fast reverse recovery - low operating forward voltage - low leakage current * ISOPLUS 247TM package - isolated back surface - low coupling capacity between pins and heatsink - high reliability - industry standard outline Applications * single switches * choppers with complementary free wheeling diodes * phaselegs, H bridges, three phase bridges e.g. for - power supplies, UPS - AC, DC and SR drives - induction heating Symbol Conditions Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 2.2 2.6 4.5 0.4 200 150 60 700 50 4.2 3.5 2 250 1.2 2.8 6.5 0.4 V V V mA mA nA ns ns ns ns mJ mJ nF nC 0.6 K/W K/W VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC RthJH IC = 35 A; VGE = 15 V; TVJ = 25C TVJ = 125C IC = 1 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25C TVJ = 125C VCE = 0 V; VGE = 20 V Inductive load, TVJ = 125C VCE = 600 V; IC = 35 A VGE = 15 V; RG = 39 VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600 V; VGE = 15 V; IC = 30 A (c) 2002 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 1-2 IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670 204 IXER 35N120D1 Diode Symbol IF25 IF90 Conditions TC = 25C TC = 90C Maximum Ratings 48 25 A A ISOPLUS 247 OUTLINE Symbol VF IRM t rr RthJC RthJH Conditions IF = 35 A; TVJ = 25C TVJ = 125C IF = 30 A; diF/dt = -500 A/s; TVJ = 125C VR = 600 V; VGE = 0 V (per diode) Characteristic Values min. typ. max. 2.5 1.9 27 150 2.6 2.9 V V A ns 1.3 K/W K/W 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection Dim. A A1 A2 b b1 b2 C D E e L L1 Q R S T U Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 13.21 13.72 15.75 16.26 1.65 3.03 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 .520 .540 .620 .640 .065 .080 Component Symbol TVJ Tstg VISOL FC Symbol Cp Weight IISOL 1 mA; 50/60 Hz mounting force with clip Conditions coupling capacity between shorted pins and mounting tab in the case Conditions Maximum Ratings -55...+150 -55...+125 2500 20...120 C C V~ N Characteristic Values min. typ. max. 30 6 pF g (c) 2002 IXYS All rights reserved 2-2 |
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